PC Tech World: memory

Showing posts with label memory. Show all posts

Friday, April 12, 2013

Samsung puts 128-gigabit 3-bit cell flash into production, plans to build more memory cards

Samsung Mass Producing High-Performance 128-Gigabit 3-Bit Multi-Level-Cell NAND Flash Memory

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class* process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

Samsung's 128Gb NAND flash is based on a 3-bit multi-level-cell design and 10nm-class process technology. It boasts the industry's highest density as well as the highest performance level of 400 megabits-per-second (mbps) data transfer rate based on the toggle DDR 2.0 interface.

Utilizing 128Gb NAND flash memory, Samsung will expand its supply of 128-gigabyte (GB) memory cards, which can store as many as sixteen 8GB full HD video files. Samsung now will also increase its production volume of SSDs with densities over 500GBs for wider adoption of SSDs in computer systems, while leading the transition of main storage drives in the notebook market from hard disk drives (HDDs) to SSDs.

Demand for high-performance 3-bit MLC NAND flash and 128Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250GB data storage, led by the Samsung SSD 840 Series.

Samsung started production of 10nm-class 64Gb MLC NAND flash memory in November last year, and in less than five months, has added the new 128Gb NAND flash to its wide range of high-density memory storage offerings. The new 128Gb chip also extends Samsung's 3-bit NAND memory line-up along with the 20nm-class* 64Gb 3-bit NAND flash chip that Samsung introduced in 2010. Further, the new 128Gb 3-bit MLC NAND chip offers more than twice the productivity of a 20nm-class 64Gb MLC NAND chip.

Samsung plans to keep introducing leading-edge SSDs and embedded memory storage solutions with high-quality features, in accelerating the growth of the premium memory market.

"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."
"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

Samsung plans to keep introducing leading-edge SSDs and embedded memory storage solutions with high-quality features, in accelerating the growth of the premium memory market.

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By: Unknown On 9:24 AM

Tuesday, February 26, 2013

ASUS posts MWC highlights, relive the weirdest press conference in recent memory

ASUS posts MWC presser highlights video, relive the weirdest press conference in recent memory

Man, oh man, ASUS certainly didn't disappoint with the verbally confusing back to back launch of the new PadFone Infinity and FonePad, but the real star of this morning's Mobile World Congress was sheer insanity, outdoing even that bizarre Columbus video from last week. What happens when you let the Magicians Guild run your show? A smattering of confused applause from an audience wondering if they hadn't partied a little too hard while out on the town in Barcelona the night before. The video's after the break. Come for the gadgets and stay for the mind-boggling strangeness of it all.

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By: Unknown On 4:07 PM

Sunday, November 18, 2012

Everspin throws first ST-MRAM chips down, launches commercial spin-torque memory era

Everspin debuts first Spin-Torque MRAM for high performance storage systems

MRAM leader sampling 64Mb DDR3 ST-MRAM; engaging with partners to prepare design and manufacturing ecosystems

CHANDLER, Ariz. – Nov. 12, 2012 – Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of high performance and ultra-low latency memory that is expected to transform storage architecture and help drive the continuous evolution of Moore's Law.

ST-MRAM is a performance-optimized Storage Class Memory (SCM) that bridges the role of today's conventional memory with the demands of tomorrow's storage systems by providing non-volatility, high endurance and ultra-low latency. The 64Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to gigabit density memories with faster speeds. Select customers are now evaluating samples of Everspin's EMD3D064M 64Mb DDR3
ST-MRAM.

"The properties of ST-MRAM are particularly appealing to the enterprise SSD market because of its ability to enhance and complement flash memory technology," said Joseph Unsworth, research vice president at Gartner. "The commercialization of this technology is an important industry milestone that should continue to drive SSD proliferation in data center and in-memory computing architectures."

The first semiconductor memory that combines the speed and endurance of DRAM with the non-volatility of Flash, ST-MRAM gives designers of high performance storage systems the ability to achieve ultra low latency, increase reliability with high cycling endurance and protect data in the event of power loss. One example of potential use is in the area of cloud storage-even as more users and content are added, faster and consistent data storage access is a necessity.

"Existing memory technologies face significant challenges to deliver the right balance of performance, power consumption, and reliability as they scale to smaller process geometries," said Jeff Janukowicz, research director for Solid State Storage and Enabling Technologies at IDC. "The commercialization of the first 64Mb Spin-Torque MRAM is an industry milestone along the path to broader use of more varied non-volatile memory technologies to improve storage device reliability, and to increase performance."

Everspin's proprietary Spin-Torque technology uses a spin-polarized current for switching. Data is stored as a magnetic state versus an electronic charge, providing a non-volatile memory bit that does not suffer wear-out or data retention issues associated with Flash technology. The EMD3D064M 64Mb STMRAM is functionally compatible with the industry standard JEDEC specification for the DDR3 interface, which delivers up to 1600 million transfers per second per I/O, translating to memory bandwidth of up to 3.2 GBytes/second at nanosecond class latency. The product is offered in an industry standard WBGA package aligned with the DDR3 standard.

"Data has transcended from being a buzzword to where it's an invaluable commodity. At the heart of the data revolution is the issue of how to store, manage and retain it securely, efficiently and cost-effectively. Our first ST-MRAM product has the potential to carry today's high performance storage systems to greater heights," said Phill LoPresti, president and CEO of Everspin Technologies. "We are collaborating with select customers to allow them to evaluate and take advantage of Spin-Torque MRAM technology sooner and to gather feedback that will help us finalize our 64Mb DDR3 ST-MRAM for production."

ST-MRAM gives system designers the benefit of persistent, high endurance storage or memory for applications that demand better reliability and that need the performance boost of DDR3 speed. The 64Mb density MRAM provides an ideal entry point for non-volatile buffer and cache memory in solid state and RAID storage systems as well as storage appliances. The 64Mb device will complement existing low cost memory technologies, reducing overall system cost and complexity.

ST-MRAM ecosystem

Everspin is manufacturing ST-MRAM on its 200mm production line in Chandler, Arizona and is collaborating with industry leaders to establish 300mm MRAM tools and additional fab capacity. Everspin is also working with design partners to ensure that the required tools and support are in place to drive the rapid adoption of ST-MRAM, including the necessary memory controllers, memory modules (DIMMs) and evaluation platforms.

Availability

Everspin is shipping working samples of the EMD3D064M 64Mb DDR3 STMRAM to select customers and will announce details on broad availability in 2013. In addition, Everspin is offering ST-MRAM non-volatile random access memory modules in industry standard configurations, and PCIe FPGA platforms are available now allowing customers to start designs. For more information, visit http://everspin.com/spinTorqueMRAM.php

About Everspin Technologies
Everspin Technologies is the leading developer and manufacturer of magnetic RAM (MRAM), offering stand-alone and embedded Toggle and Spin-Torque MRAM products. As the world's first volume MRAM supplier, Everspin has established itself as "The MRAM Company" with an intellectual property portfolio of more than 600 active patents and applications, many of which are fundamental and essential for MRAM technologies. Today Everspin delivers MRAM products to broad applications in the data center and storage, energy and infrastructure,
and automotive and transportation markets. www.everspin.com

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By: Dilusha On 10:05 PM

Samsung's new 10nm-process 64GB mobile flash memory chips are smaller, faster, better

Samsung Introduces Advanced Memory Storage Solution for Slim Smartphones and Tablets
SEOUL, Korea on Nov. 15. 2012

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced a next-generation 64GB embedded multimedia card (eMMC) using 10 nanometer (nm)-class* process technology. The new 64Gb NAND memory went into production late last month.

Myungho Kim, vice president of Memory marketing, Device Solutions, Samsung Electronics noted, "The new high-speed, small form factor eMMC reinforces Samsung's technology leadership in storage memory solutions. We look forward to expanding our line-up of embedded memory solutions in conjunction with the new chip's design, in pursuing a system-level adoption of application processors and other key components that form the foundation for the most advanced mobile platforms. This will allow us to better attend to time-to-market demands enabling the design of more convenient features for next-generation mobile applications."

Embedded memory is the key memory component in popular mobile applications such as smartphones and tablets. Advanced high-performance, high-density eMMCs allow users to access high-density and high-resolution content such as full HD video on their latest mobile devices and provide a better user experience for web browsing, gaming and running rich applications.

Samsung is applying 64Gb high-performance NAND memory using its10nm-class technology to the new 64GB eMMC Pro Class 2000 memory solution. The new embedded memory solution exceeds the performance levels of the conventional 64GB eMMC Pro Class 1500 based on an eMMC 4.5 interface.

The new high-speed eMMC will be submitted next year to the industry standards body JEDEC, (Joint Electron Engineering Council) for adoption as an industry standard.

Samsung's next-generation 64GB eMMC Pro Class 2000 comes just five months after the company introduced its first embedded memory supporting the eMMC4.5 interface and delivers a 30 percent advantage in performance over that solution.

The 10nm-class technology based NAND also is process compatible to Samsung's advanced 20nm-class* 64Gb MLC NAND, which was first available last May, improving manufacturing productivity by 30 percent.

The new memory solution has a random write speed of 2,000 IOPS (input/output per second) and a random read speed of 5,000 IOPS. In addition, sequential read and write speeds are 260 megabytes per second (MB/s) and 50MB/s respectively, which is up to 10 times faster than a class 10 external memory card that reads at 24MB/s and writes at 12MB/s, greatly enhancing the smoothness of multitasking on mobile gadgets.

Current mobile applications show a distinctive trend to slimmer designs and larger display screens, while using advanced multi-core processors and high density (2 Gigabyte) LPDDR2 memory for higher performance, with larger batteries for longer usage on a single charge. This new chip accommodates the increasing size limitations of mobile form factors at the component level.

The 64GB eMMC Pro Class 2000 measures 11.5mm by 13mm, which represents a 20 percent reduction in size over the conventional embedded memory form factor (12mm by 16mm).

For more information about Samsung memory, visit: www.samsungsemi.com or www.samsung.com/memory

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Samsung and the stylized Samsung design are trademarks and service marks of Samsung Electronics Co., Ltd. Other trademarks are the property of their respective owners.

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By: Dilusha On 8:58 PM